Wireless chip and electronic device having wireless chip

ABSTRACT

It is an object to provide a wireless chip which can increase a mechanical strength, and a wireless chip with a high durability. A wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, and a conductive layer connecting the chip and the antenna. Further, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a sensor device, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the sensor device. Moreover, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a battery, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the battery.

TECHNICAL FIELD

The present invention relates to a wireless chip which can communicatedata by wireless communication and an electronic device having awireless chip.

BACKGROUND ART

In recent years, development of a wireless chip including a plurality ofcircuits and an antenna is advanced. Such a wireless chip is called asan ID tag, an IC tag, an IC chip, an RF (Radio Frequency) tag, awireless tag, an electronic tag, and an RFID (Radio FrequencyIdentification) tag, and has already been introduced into some markets.

Many of these wireless chips which are put into practical use atpresent, include a circuit (referred to as an IC (Integrated Circuit)chip) with the use of a semiconductor substrate such as a silicon and anantenna. The antenna is formed by a technique such as a printing method,a method of etching a conductive thin film, and a plating method (forexample, refer to the Patent Document 1).

[Patent Document 1] Japanese Patent Laid-Open No. Hei9-1970

DISCLOSURE OF INVENTION

The antenna formed by the above technique is a thin film or a thickfilm. An antenna attached to a flexible material such as paper andplastic, is weak in bending or folding so that one part of the antennais easy to be broken. Further, the wireless chip having such an antennahas a problem that durability is low.

In view of the above problem, it is an object of the present inventionto provide a wireless chip that can enhance a mechanical strength. Inaddition, it is an object of the present invention to provide a wirelesschip having a high durability. Further, it is an object of the presentinvention to provide a product having a wireless chip.

One feature of the present invention is a chip including a transistorwhich has a field-effect transistor; an antenna which has a dielectriclayer and a plurality of conductive layers sandwiching the dielectriclayer, and a conductive layer connecting the chip and the antenna.

In addition, one feature of the present invention is a chip including atransistor which has a field-effect transistor; an antenna which has adielectric layer and a plurality of conductive layers sandwiching thedielectric layer; a sensor device; a conductive layer connecting thechip and the antenna, and a conductive layer connecting the chip and thesensor. Note that the chip, the antenna, and the sensor device aremounted on a wiring substrate. Further, the chip and the sensor deviceare mounted at the opposite side of the antenna in the wiring substrate.

In addition, one feature of the present invention is a chip including atransistor which has a field-effect transistor; an antenna which has adielectric layer and a plurality of conductive layers sandwiching thedielectric layer; a battery; a conductive layer connecting the chip andthe antenna, and a conductive layer connecting the chip and the battery.Note that the chip, the antenna, and the battery are mounted on a wiringsubstrate. Further, the chip and the battery are mounted at the oppositeside of the antenna in the wiring substrate.

In addition, one feature of the present invention is a chip including atransistor which has a field-effect transistor; an antenna which has adielectric layer and a plurality of conductive layers sandwiching thedielectric layer; a battery; a sensor device; a conductive layerconnecting the chip and the antenna, a conductive layer connecting thechip and the battery, and the conductive layer connecting the chip andthe sensor device. Note that the chip, the antenna, the sensor deviceand the battery are mounted on a wiring substrate. Further, the chip,the sensor device, and the battery are mounted at the opposite side ofthe antenna in the wiring substrate.

Note that the plurality of the conductive layers sandwiching thedielectric layer in the antenna functions as a radiating electrode and aground contact body, respectively.

In addition, the dielectric layer of the antenna is formed withceramics, organic resin, or a mixture of ceramics and organic resin. Asa typical example of ceramics, alumina, glass, forsterite, bariumtitanate, lead titanate, strontium titanate, lead zirconate, lithiumniobate, lead zirconium titanate, or the like can be nominated. Inaddition, as a typical example of a dielectric layer, epoxy resin,phenol resin, polybutadiene resin, bismaleimide triazine resin,vinylbenzyl, poly fumarate, or the like can be nominated.

One feature of the present invention is an electronic device having theabove wireless chip. As a typical example of the electronic device, aliquid crystal display device, an EL display device, a televisiondevice, a mobile phone, a printer, a camera, a personal computer, aspeaker device, a headphone, a navigation device, an ETC car-mounteddevice, an electronic key, and the like can be nominated.

In addition, since a patch antenna has high mechanical strength, it canbe used repeatedly. Therefore, it is possible to provide a container,which has high durability and is recyclable like a returnable container,with the patch antenna.

In addition, the wireless chip having a sensor device can read data,which is detected by the sensor device, with a reader/writer. Therefore,it is possible to control quality data and storage situation ofproducts.

In addition, a wireless chip having a battery can transmit a signal to areader/writer automatically. In addition, the communication distancewith the reader/writer can be lengthened.

In addition, a wireless chip having a battery and a sensor device cantransmit data detected by the sensor device to the outsideautomatically. Therefore, the detected data can be stored in database inreal time.

BRIEF DESCRIPTION OF DRAWINGS

In the accompanying drawings:

FIG. 1 is a cross-sectional diagram describing a wireless chip which isrelated to the present invention;

FIG. 2 is a cross-sectional diagram describing a wireless chip which isrelated to the present invention;

FIG. 3 is a cross-sectional diagram describing a wireless chip which isrelated to the present invention;

FIG. 4 is a cross-sectional diagram describing a chip having an effectof a field-effect transistor related to the present invention;

FIG. 5A to 5D are perspective views describing a patch antenna which isapplicable to the present invention;

FIG. 6 is a diagram describing a wireless chip which is related to thepresent invention;

FIG. 7 is a diagram describing a wireless chip which is related to thepresent invention;

FIGS. 8A and 8B are diagrams describing a wireless chip which is relatedto the present invention;

FIG. 9 is a diagram describing an operation method of a wireless chipwhich is related to the present invention;

FIG. 10 is a diagram describing a transmission/reception method of awireless chip and a reader/writer which are related to the presentinvention;

FIG. 11A to 11G are diagrams describing an application of a wiring chipof the present invention;

FIG. 12 is a projected diagram describing an application of a wiringchip of the present invention;

FIG. 13A to 13D are diagrams describing an application of a wiring chipof the present invention;

FIG. 14 is a diagram describing a high frequency circuit which isapplicable to the present invention; and

FIG. 15 is a diagram describing an application of a wireless chip of thepresent invention.

BEST MODE FOR CARRYING OUT THE INVENTION

The embodiment modes of the present invention will be describedhereinafter referring to the accompanying drawings. Note that thepresent invention can be performed in various modes, and it is easilyunderstood by those skilled in the art that the embodiment modes anddetails herein disclosed can be modified in various ways withoutdeparting from the purpose and the scope of the invention. Therefore,the present invention should not be interpreted as being limited to thedescription of the embodiment modes to be given below. Note that, in allof the drawings for describing the embodiment mode, the same referencenumeral is attached to the same portion or the portion having a similarfunction, and the repeated description thereof is omitted.

Embodiment Mode 1

A description is made on one embodiment mode of a wireless chip of thepresent invention referring to FIG. 1. FIG. 1 is a cross-sectionaldiagram of a wireless chip.

In a wireless chip of the present embodiment mode, a chip 101 having afield-effect transistor and an antenna (hereinafter, which is describedas a patch antenna 103) are connected by conductive layers 102 a and 102b. Concretely, a connection terminal 104 a formed over the surface ofthe chip 101 having a field-effect transistor and a power feeding layer113 of the patch antenna are connected by the conductive layer 102 a. Inaddition, a connection terminal 104 h formed over the surface of thechip 101 having a field-effect transistor and a conductive layer 112functioning as a ground contact body of the patch antenna are connectedby the conductive layer 102 b. In addition, a connecting portion of thepatch antenna 103 and the chip 101 having a field-effect transistor maybe filled with an under fill 104.

The patch antenna 103 includes a dielectric layer 110; the firstconductive layer 111 formed over a surface of the dielectric layer 110;the second conductive layer 112 which faces the first conductive layer111 sandwiching the dielectric layer 110 and is formed over the othersurface of the dielectric layer 110, and the power feeding layer 113.The first conductive layer 111 functions as a radiating electrode. Thesecond conductive layer 112 functions as a ground contact body. Thepower feeding layer 113 is provided so that the first conductive layer111 and the second conductive layer 112 are not touched with each other.In addition, power is supplied from the patch antenna to the chip havinga field-effect transistor, or from the chip having a field-effecttransistor to the patch antenna through the power feeding layer 113.Note that a power feeding point may be used instead of the power feedinglayer 113.

Herein, a description is made on a structure of the patch antenna.

The dielectric layer 110 of the patch antenna can be formed withceramics, organic resin or a mixture of ceramics and organic resin. As atypical example of ceramics, alumina, glass, forsterite, or the like canbe nominated. Moreover, a plurality of ceramics may be mixed. Thedielectric layer 110 is preferably formed with a ferroelectric materialfor obtaining a high dielectric constant. As a typical example of such aferroelectric material, barium titanate (BaTiO₃), a lead titanate(PbTiO₃), strontium titanate (SrTiO₃), lead zirconate (PbZrO₃), lithiumniobate (LiNbO₃), lead zirconium titanate (PZT), or the like can benominated. Further, a plurality of ferroelectric materials may be mixed.

In addition, as organic resin, thermosetting resin or thermoplasticresin is used appropriately. As a typical example of organic resin,epoxy resin, phenol resin, polybutadiene resin, BT resin, vinylbenzyl,poly fumarate, fluoride resin or the like can be employed. Further, aplurality of organic resin materials may be mixed.

When the dielectric layer 110 is formed with a mixture of ceramics andorganic resin, a particle of particulate ceramic is preferably dispersedin organic resin for forming the dielectric layer 110. At this time, thecontained amount of the particulate ceramic to the dielectric layer 110is preferably 20 volume % or more and 60 volume % or less. In addition,the particle size of ceramics is preferably 1 to 50 μm.

The relative dielectric constant of the dielectric layer 110 is 2.6 to150, preferably 2.6 to 40. By using a ferroelectric material with a highrelative dielectric constant, a volume of the patch antenna can bereduced.

The first conductive layer 111, the second conductive layer 112, thepower feeding layer 113 of the patch antenna can be formed with a metalselected from gold, silver, copper, palladium, platinum, and aluminum oran alloy, or the like. In addition, the first conductive layer 111, thesecond conductive layer 112, the power feeding layer 113 of the patchantenna can be formed by a printing method, or a plating method. Inaddition, after a conductive film is formed over a dielectric layer by avapor deposition method, a sputtering method, or the like, eachconductive layer can be formed by etching a part of the conductive film.

A plane area of the patch antenna 103 is preferably to be severalmm×several mm to several ten mm×several ten mm. Typical example is 7mm×7 mm to 12 mm×12 mm. The thickness of the patch antenna is 1 mm to 15mm, typically 1.5 mm to 5 mm. As for the shape of the patch antenna,plane surface of the patch antenna is preferably flat plate having arectangular plane surface; however, it is not limited to this. A flatplate having a circular plane surface can be also used. Note that theplane surface here is one in which the first conductive layerfunctioning as a radiating electrode or the second conductive layerfunctioning as a ground contact body is formed.

A description is made on a structure of a patch antenna referring toFIGS. 5A to 5D.

FIG. 5A shows a patch antenna having a first conductive layer 202functioning as a radiating electrode; a dielectric layer 201; a secondconductive layer 203 functioning as a ground contact body; a powerfeeding point 204, and a power feeder which is formed in the throughhole provided in the first conductive layer 202, the dielectric layer201, and the second, conductive layer 203, and is connected to the powerfeeding point 204. Note that the power feeder is connected to the firstconductive layer 202 in the power feeding point 204; however, it is notconnected to the second conductive layer 203. When the first conductivelayer 202 functioning as a radiating electrode is a circular shape and adegenerate separation element 205 presents in two regions which aresymmetric about a point with each other, the patch antenna is acircularly-polarized wave antenna. Meanwhile, the first conductive layer202 is a circular shape, the patch antenna is a linearly-polarized waveantenna.

FIG. 5B shows a patch antenna having a first conductive layer 212functioning as a radiating electrode; a dielectric layer 211; a secondconductive layer 213 functioning as a ground contact body; a powerfeeding point 214, and a power feeder which is formed in the throughhole provided in the first conductive layer 212, the dielectric layer211, and the second conductive layer 213, and is connected to the powerfeeding point 214. Note that the power feeding body is connected to thefirst conductive layer 212 in the power feeding point 214; however, itis not connected to the second conductive layer 213. When the firstconductive layer 212 functioning as a radiating electrode is rectangularand a degenerate separation element 215 presents in two corners whichare symmetric about a point with each other, the patch antenna is acircularly-polarized wave patch antenna. When the first conductive layer212 is a rectangular shape, the patch antenna is a linearly-polarizedwave patch antenna.

FIG. 5C describes a patch antenna having a first conductive layer 222functioning as a radiating electrode; a dielectric layer 221; a secondconductive layer 223 functioning as a ground contact body, and a powerfeeding layer 224. When the first conductive layer 222 functioning as aradiating electrode is rectangular and a degenerate separation element225 presents in two corners which are symmetric about a point with eachother, it is a circularly-polarized wave patch antenna. In the casewhere the first conductive layer 222 is a rectangle having no adegenerate separation element 225, the patch antenna is alinearly-polarized wave patch antenna. The first conductive layer 222functioning as a radiating electrode and power feeding layer 224 arecapacitance-coupled through a gap. Since the power feeding layer 224 isformed on side surface of the dielectric layer, surface mounting ispossible.

Since the patch antennas shown in FIG. 5A to 5C have the secondconductive layers 203, 213, and 223 functioning as a ground contact bodyto one surface of the dielectric layers 201, 211, and 221, they have adirectivity at the side of the first conductive layers 202, 212, and222. Thus, electric wave is emitted to the side of the first conductivelayers.

FIG. 5D is a patch antenna having a first conductive layer 242functioning as a radiating electrode; a dielectric layer 241; the secondconductive layer 243 functioning as a ground contact body, and a powerfeeding layer 244. In addition, as shown in FIG. 5D, an orthogonal slits245 are formed diagonally in the first conductive layer 242. In otherwords, crisscross cutouts are provided in the first conductive layer 242functioning as a radiating electrode. Therefore, the dielectric layer241 is exposed in the crisscross part. The first conductive layer 242functioning as a radiating electrode and the power feeding layer 244 arecapacitance-coupled through a gap. As a typical example of the patchantenna having such a shape, CABPB1240, CABPB0730, CABPB0715 (a productmanufactured by TDK) can be nominated. Since the power feeding layer 244is formed over the side surface of the dielectric layer 241, surfacemounting is possible. The patch antenna having such a structure has nodirectivity due to the orthogonal slits of the first electrode layer 242functioning as a radiating electrode, and thus, an electric wave can beemitted in all directions. Therefore, mounting place or setting anglemay not be decided. Thus, the degree of freedom can be increased indesigning electric devices.

In addition, a known patch antenna can be used besides the patch antennashown in FIG. 5A to 5D.

In particular, by using a patch antenna of circularly-polarized wave, itis possible to carry out transmission/reception such as third-generationdata communication, packet communication, and transmission/reception ofGPS (Global Positioning System (1.5 GHz)), satellite digital broadcast(2.6 GHz), PAN (a personal area network) such as wireless LAN (LocalArea Network) (2.4 GHz, 5.2 GHz), a wireless communication technologyfor connecting information appliances (Bluetooth (trademark) (2.4 GHz)),or UWB (Ultra Wide Band) (3 to 10 GHz), and the like.

A description is made on the chip 101 having a field-effect transistorreferring to FIG. 4.

FIG. 4 describes a cross-sectional diagram of the chip 101 having afield-effect transistor. Element isolation regions 501 a to 501 e areformed over a substrate 500, and a field-effect transistor 502 is formedbetween each of the element isolation regions 501 a to 501 e.

The field-effect transistor 502 includes a gate insulating film 503formed over a single crystal semiconductor substrate, a gate electrode504 formed over the gate insulating film, source and drain regions 505 aand 505 b in the single crystal semiconductor substrate, an interlayerinsulating layer 508 formed over the gate electrode, and source anddrain wirings 509 a and 509 b connected to the source and drain regions505 a and 505 b. Note that sidewalls 507 a and 507 b, which are formedat the side wall of the gate electrode 504 and the gate insulating film503, or low concentration impurity regions 506 a and 506 b, which arecovered by the sidewalls 507 a and 507 b in the single crystalsemiconductor substrate, may be included.

A substrate 500 is a single crystalline semiconductor substrate or acompound semiconductor substrate. As a typical example, an n-type orp-type single crystalline silicon substrate, a GaAs substrate, an InPsubstrate, a GaN substrate, a SiC substrate, a sapphire substrate, aZnSe substrate or the like can be nominated. Alternatively, an SOIsubstrate (Silicon On Insulator) can be used. In this embodiment mode,an n-type single crystalline silicon substrate is used as the substrate500.

The element isolation regions 501 a to 501 e are formed by a knownmethod such as a LOCOS (Local Oxidation of Silicon) method or a trenchisolation method, appropriately. Herein, a silicon oxide layer is formedby the trench isolation method as the element isolation regions 501 a to501 e.

The gate insulating film 503 is formed by thermally oxidizing the singlecrystalline semiconductor substrate. The gate electrode 504 can be apolycrystalline silicon layer with a thickness of 100 to 300 nm, or astacked structure including a silicide layer such as a tungsten silicidelayer, a molybdenum silicide layer, and a cobalt silicide layer formedover the polycrystalline silicon layer. Moreover, a nitride tungstenlayer and a tungsten layer may be stacked over the polycrystallinesilicon layer.

For the source and drain regions 505 a and 505 b, an n⁺ region in whichphosphorus is added to a p-well region or a p⁺ region in which boron isadded to an n-well region can be used. For the low concentrationimpurity regions 506 a and 506 b, an n-region in which phosphorus isadded to a p-well region or a p-region in which boron is added to ann-well region can be used. Herein, since an n-type single crystallinesilicon substrate is used, source and drain regions of a p⁺ region,which are formed by adding boron to a substrate, and a low concentrationimpurity region of a p⁻ region are formed. Note that silicide such asmanganese silicide, tungsten silicide, titanium silicide, cobaltsilicide, and nickel silicide may be included in the source and drainregions 505 a and 505 b. By having silicide in the surface of the sourceand drain regions, connection resistance of the source and drain wiringsand the source and drain regions can be reduced.

Sidewalls 507 a and 507 b form an insulating layer which is formed withsilicon oxide by a CVD method over a substrate, and they can be formedby anisotropically etching the insulating layer with an RIE (Reactiveion etching) method.

The interlayer insulating layer 508 is formed with an inorganicinsulating material such as silicon oxide and silicon nitride oxide, oran organic insulating material such as acryl resin and polyimid resin.In the case where a coating method such as a spin-coating method and aroll coater is used, the insulating layer which is formed with siliconoxide by a thermal treatment can be used after an insulating filmmaterial dissolved in an organic solvent is coated. Herein, theinterlayer insulating layer 508 is formed with silicon oxide.

Source and drain wirings 509 a and 509 b are preferably formed bycombining a low resistor material such as aluminum (Al) and a barriermetal used a metal material with a high melting point such as titanium(Ti) and molybdenum (Mo). Concretely, a stacked structure of titanium(Ti) and aluminum (Al) and a stacked structure of molybdenum (Mo) andaluminum (Al) can be nominated.

The chip 101 having the field-effect transistor may include a resistorelement, a capacitor, or the like, besides the field-effect transistor.

An interlayer insulating layer 511 is formed over the interlayerinsulating layer 508, and the source and drain wirings 509 a and 509 b.The interlayer insulating layer 511 is formed in the same manner as theinterlayer insulating layer 508. Connection terminals 512 and 513 whichare connected to the field-effect transistor 502 are provided over theinterlayer insulating layer 508.

An insulating layer 514 which covers a part of the connection terminals512 and 513 and the interlayer insulating layer 511 may be formed. Sincethe insulating layer 514 functions as a protection layer, it ispreferably formed with nitride silicon, oxide silicon, silicon nitrideoxide, silicon oxynitride, DLC (diamond like carbon), or the like.

Conductive layers 102 a and 102 b which connects the patch antenna 103and the chip 101 having a field-effect transistor are formed with abump, a conductive paste, an anisotropic conductive adhesive, ananisotropic conductive film, or the like. Alternatively, a bump and aconductive paste may be used. Moreover, a bump and an anisotropicconductive adhesive, or a bump and an anisotropic conductive film may beused. In the cases, the conductive layer and the connection terminal areconnected by the bump and the conductive particle.

An anisotropic conductive film and an anisotropic conductive adhesiveare adhesive organic resin in which conductive particles of particlesize of several nm to several μm are diffused. As organic resin, epoxyresin, phenolic resin, or the like can be nominated. The conductiveparticle is formed with one or more elements selected from gold, silver,copper, palladium, or platinum. Alternatively, a particle having amultilayer structure of these elements may be used. Further, aconductive particle whose surface is coated with a thin film formed withone or more metals selected from gold, silver, copper, palladium, orplatinum may be used. The particle is formed with resin.

The under fill 104 has a function to reinforce a connection portion ofthe chip 101 having a field-effect transistor and the patch antenna 103,and to prevent water from entering from outside, or the like. The underfill 104 is formed with epoxy resin, acrylic resin, polyimid resin, orthe like.

A description is made on a structure of a wireless chip 900 shown in thepresent embodiment mode referring to FIG. 6. The wireless chip 900 ofthe present embodiment mode includes a chip 901 having a field-effecttransistor and an antenna 902.

The chip 901 having a field-effect transistor includes an arithmeticprocessing circuit portion 903, a memory portion 904, a communicationcircuit portion 905, and a power supply portion 907. The memory portion904 includes a memory for only reading, or one or both of rewritablememory. The memory portion 904 is formed with one or more selected froma static RAM, an EEPROM (Electrically Erasable Programmable Read-OnlyMemory), a flash memory, and an organic memory, so that the receiveddata from the outside through the antenna 902 can be recorded anytime.

Note that an organic memory is such that a layer having an organiccompound is provided between a pair of electrodes. Further, an organicmemory is such that a mixed layer of an organic compound and aninorganic compound is provided between a pair of electrodes. As atypical example of an organic compound, a material whose crystallinestate, conductivity, or shape is changed by applying voltage or emittinglight can be nominated. Typically, a conjugated polymer doped with acompound that generates acid by absorbing light (photooxidationgenerating agent), an organic compound having a hole transportingproperty, or an organic compound having an electron transportingproperty can be used.

Since the organic memory can realize reduction in its size andthickness, and increase its capacity simultaneously, a wireless chip canachieve reduction in its size and weight by providing the memory portion904 using an organic memory.

Note that the structure of the memory portion 904 may be formed to makeit possible to write anytime. In addition, the memory portion 904 mayhave a memory element of a floating gate structure in which data is notdisappeared. Especially, it is possible to utilize a memory elementwhich has a floating gate structure and in which data can be writtenonly once. By simplifying the function, the size of a wireless chip canbe reduced. Further, reduction in power consumption is also achieved.

The communication circuit portion 905 includes a demodulation circuit912 and a modulation circuit 913. The demodulation circuit 912demodulates a signal which is inputted through the antenna 902, andoutputs to the arithmetic processing circuit portion 903. The signalincludes data to be memorized in the memory portion 904. The data readfrom the memory portion 904 is outputted to the modulation circuit 913through the arithmetic processing circuit portion 903. The modulationcircuit 913 modulates the signal into a signal which is acceptable forwireless communication, and outputs to an external device through theantenna 902.

The electric power required for operating the arithmetic processingcircuit portion 903, the memory portion 904, and the communicationcircuit portion 905 is supplied through the antenna 902.

The antenna 902 receives an electromagnetic wave which is supplied fromthe external device called as a reader/writer, and a required electricpower is generated in a power supply circuit portion 907. The antenna902 is appropriately designed in accordance with a frequency band to becommunicated. The frequency band of the electromagnetic wave is longwaveband in the range of 30 to 135 kHz, short waveband in the range of 6to 60 MHz (typically 13.56 MHz), ultrashort wave band in the range of400 to 950 MHz, micro wave band in the range of 2 to 25 GHz, or the likecan be used. For antennas of the long wave band and short wave band, onewhich utilizes electromagnetic induction by a loop antenna is used. Inaddition, one which utilizes a mutual induction effect (electromagneticcoupling type) or an induction effect due to static (electrostaticcoupling type) may be used. Electric power is generated in the powersupply circuit portion 907. The antenna 902 may be provided byseparating a data communication antenna and a power supply antenna.

The patch antenna 103 shown in FIG. 1 can be used for the antenna 902shown in FIG. 6, and the chip 101 having a field-effect transistor shownin FIG. 1 can be used for the chip 901 having a field-effect transistorshown in FIG. 6. As a result, durability of a wireless chip isincreased.

Embodiment Mode 2

A description is made on one embodiment mode of a wireless chip of thepresent invention referring to FIG. 2. FIG. 2 is a cross-sectionaldiagram of a wireless chip. In the present embodiment mode, descriptionis made on a structure of a wireless chip including a chip having afield-effect transistor, a patch antenna, and a sensor device.

The chip 101 having a field-effect transistor is mounted on a wiringsubstrate 121, in the wireless chip of the present embodiment mode.Specifically, connection terminals 104 a to 104 c formed over thesurface of the chip 101 having a field-effect transistor and connectionterminals 125 a to 125 c formed over the wiring substrate 121 areconnected by conductive layers 102 a to 102 c, respectively.

A sensor device 122 is mounted over the wiring substrate 121.Specifically, a connection terminal 126 formed over the surface of thesensor device 122 and a connection terminal 127 formed over the wiringsubstrate 121 are connected by a conductive layer 129.

The connection terminals 125 a to 125 c and the connection terminal 127formed over the wiring substrate 121 are connected by a wiring and aconductive layer formed in a via hole, a through hole, or the like,which are formed over the wiring substrate 121. In other words, the chip101 having a field-effect transistor and the sensor device 122 areconnected electrically.

The patch antenna 103 is mounted over the wiring substrate 121.Specifically, the power feeding layer 113 of the patch antenna 103 and aconnection terminal 123 a formed over the wiring substrate 121 areconnected by a conductive layer 124 a, and the conductive layer 112functioning as a ground contact body of the patch antenna and aconnection terminal 123 b formed over a wiring substrate are connectedby a conductive layer 124 b.

The connection terminals 123 a and 125 a are connected by a conductivelayer formed in the via hole, the through hole or the like of the wiringsubstrate 121, which is not shown in figure. In the same manner, theconnection terminal 123 b and the connection terminal 125 b areconnected by the conductive layer formed over the via hole, the throughhole or the like of the wiring substrate 121, respectively. In otherwords, the chip 101 having a field-effect transistor and the patchantenna 103 are electrically connected.

Herein, the patch antenna 103 and the chip 101 having a field-effecttransistor are mounted at the opposite side of the wiring substrate 121.Thus, the connection terminals 123 a and 123 b are formed over one faceof the wiring substrate 121, and the connection terminals 125 a and 125b are formed over the other face of the wiring substrate 121. However,the connection terminals 123 a and 123 b and the connection terminals125 a and 125 b may be formed over one face of the wiring substrate 121,and the chip 101 having a field-effect transistor and the patch antenna103 may be formed over the other face of the wiring substrate.

The wiring substrate 121 is a plate-like substrate or a flexiblesubstrate. In addition, the wiring substrate 121 employs a multilayerwiring substrate having a plurality of wiring layers in the substrate.As a hard wiring substrate, a substrate which is formed with glass epoxyresin, ceramics, alumina, nitride alumina, or the like can be nominated.As a flexible wiring substrate, a substrate which is formed withpolyimide such as a TAB (Tape Automated Bonding) substrate or a FPC(flexible printed substrate), or the like, typically can be nominated.

The connection terminals 123 a, 123 b, 125 a to 125 c, and 127 formedover the wiring substrate 121 are formed with copper, gold, or the like.Each of the connection terminals is connected to a wiring formed overthe surface or inside the wiring substrate 121.

The connection portion of the patch antenna 103 and the wiring substrate121, the connection portion of the chip 101 having a field-effecttransistor and the wiring substrate 121, and the connection portion ofthe sensor device 122 and the wiring substrate 121 may be filled withunder fills 114 to 116.

The conductive layers 102 c, 124 a and 124 b, and the conductive layer129 are formed in the same manner as the conductive layers 102 a and 102b shown in Embodiment Mode 1. In addition, the under fills 114 to 116are formed in the same manner as the under fill 104 shown in EmbodimentMode 1.

Herein, a description is made on a structure of a wireless chip of thepresent invention referring to FIG. 7. The wireless chip of the presentembodiment mode includes a sensor device 908 which is connected to aarithmetic processing circuit portion 903 through a bus 910, in additionto the wireless chip shown in Embodiment Mode 1. In addition, the sensordevice 908 includes a sensor element 906 and a sensor circuit 909.

As the sensor device, a device which can detect temperature, pressure,flow rate, light, magnetism, acoustic wave, acceleration, humidity, gascomponent, liquid component, or the other characteristics by a physicalor chemical method is used. The sensor device 908 includes the sensorelement 906 and the sensor circuit 909 which controls the sensor element906. The sensor element 906 is formed with an element such as a lowresistor element, a capacitance-coupled element, an inductively-coupledelement, a photoelectromotive element, a photoelectric conversionelement, a thermoelectromotive element, a transistor, a thermistor, adiode, an electrostatic capacitance element, and a piezoelectricelement. Note that a plurality of the sensor elements 906 may beprovided. In this case, a plurality of physical quantities and chemicalquantities can be detected concurrently.

Note that the physical quantity here means temperature, pressure, flowrate, light, magnetism, acoustic wave, acceleration, humidity, and thelike, while the chemical quantity means a chemical material such as agas component like gas, and a liquid component like ion. The chemicalquantity means also an organic compound such as a particular biologicalmaterial included in blood, sweat, urine, or the like, (for example,blood glucose level or the like in blood) besides the above. Inparticular, in the case of detecting the chemical quantity, since acertain material need to be selectively detected, a material whichselectively reacts with the material to be detected is provided inadvance in a detecting element 31. For example, in the case of detectinga biological material, it is preferable to fix, in a polymer molecule orthe like, enzyme, a resistor molecule, a microbial cell, or the likewhich selectively react with the biological material to be detected bythe detecting element 31. Herein, an optical sensor which is formed witha single crystalline silicon is used as the sensor element 906.

The sensor circuit 909 detects an impedance, a reactance, an inductance,and a change of voltage or current, and carried out an analogue/digitalconversion (A/D conversion) to output signals into the arithmeticprocessing circuit portion 903.

The data detected by the sensor device 908 is outputted to each ofmodulation circuits 913 through the bus 910 and the arithmeticprocessing circuit portion 903. The modulation circuit 913 modulates thesignal into a signal which is acceptable for wireless communication, andoutputs to an external device via an antenna 902.

Note that it is possible to combine the present embodiment mode and theEmbodiment Mode 1, appropriately.

The wireless chip of the present embodiment mode can transmit datadetected by the sensor device to the outside. Further, the wireless chipof the present embodiment mode can convert data detected by the sensordevice into a signal and transmit the signal to a reader/writer throughthe antenna. Thus, confidentiality can be increased. In addition, sincedata detected by the sensor can be stored in a memory portion, a devicehaving a sensor function can be reduced in its size.

Embodiment Mode 3

A description is made on one embodiment mode of a wireless chip of thepresent invention referring to FIG. 3. FIG. 3 is a cross-sectionaldiagram of the wireless chip.

The wireless chip of the present embodiment mode is one in which abattery is added to the wireless chip shown in Embodiment Mode 1.Specifically, the connection terminals 104 a to 104 c formed over thesurface of the chip 101 having a field-effect transistor and theconnection terminals 125 a to 125 c formed over the wiring substrate 121are connected by the conductive layers 102 a to 102 c, respectively.

A battery 141 is mounted over the wiring substrate 121. Specifically, aconnection terminal 142 formed over the surface of the battery 141 and aconnection terminal 143 formed over the wiring substrate 121 areconnected by a conductive layer 144.

Note that the connection terminals 125 a to 125 c formed over the wiringsubstrate 121 and the connection terminal 143 are connected by theconductive layer such as the wiring, the via hole, and the through holeformed over the wiring substrate. In other words, the chip 101 having afield-effect transistor and the battery 141 are connected. Specifically,a power supply circuit portion 907 of the chip 101 having a field-effecttransistor and the battery 141 are connected.

The patch antenna 103 is mounted over the wiring substrate 121.Specifically, the power feeding layer 113 of the patch antenna 103 andthe connection terminal 123 a formed over the wiring substrate 121 areconnected by the conductive layer 124 a. The conductive layer 112functioning as the ground contact body of the patch antenna and theconnection terminal 123 b formed over the wiring substrate are connectedby the conductive layer 124 b. In other words, the chip 101 having afield-effect transistor and the patch antenna 103 are connected.

The battery 141 is preferably compact size, more preferably sheet-likewith a thickness of 0.5 mm or less and 0.1 mm or more. Moreover, thebattery is preferably square-shaped for being easily manufactured;however, it may be circular, oval, or polygonal. Further, the battery141 may be a primary battery or a secondary battery. The battery 141 canbe reduced in its size by using a lithium battery, preferably a lithiumpolymer battery which utilizes a gel-like electrolyte, an organicradical battery which utilizes a gel-like electrolyte, and a lithium ionbattery or the like.

In the case where the battery 141 is a secondary battery, it ispreferable to provide the wiring substrate 121 with a device having aphotoelectromotive effect such as a solar battery using a singlecrystalline silicon or an amorphous silicon, and a dye-sensitised solarcell. Alternatively, a piezoelectric element which converts energygenerated by load or exercise into an electric signal due to apiezoelectric effect may be provided.

The connection portion of the patch antenna 103 and the wiring substrate121, the connection portion of the chip 101 having a field-effecttransistor and the wiring substrate 121, and the connection portion ofthe battery 141 and the wiring substrate 121 may be filled with underfills 114 to 116.

Note that it is possible to combine the present embodiment mode and theEmbodiment Mode 1, appropriately. In addition, the battery 141 may beadded to the wireless chip having a sensor device as shown in EmbodimentMode 2.

The wireless chip having the battery 141 can transmit a signal to areader/writer automatically.

Embodiment 1

The usage of the wireless chip of the present invention is broad. Forexample, a wireless chip 20 can be use by mounting on products such asvehicles (for example, a bicycle 3901 shown in FIG. 11B, and a car);groceries; plants; clothes; livingwares (for example, a bag 3900 shownin FIG. 11A); an electronic device; an inspection apparatus; and afireworks ball (reference: FIG. 11G), animals, and human body. Theelectronic device includes a liquid crystal display device, an EL(Electro Luminescence) display device, a television device (which issimply called as a TV, a TV receiver, a television receiver), a mobilephone 3902 (reference: FIG. 11C), a printer, a camera, a personalcomputer, a goggle with a earphone 3903 (reference: FIG. 11D), a speakerdevice 3904 (reference: FIG. 11E), a headphone 3905 (reference: FIG.11F), a navigation device, an ETC (Electronic Toll Collection system:automatic toll collection system for toll roads) car-mounted device, anelectronic key, or the like.

By providing the wireless chip 20 of the present invention on the bag3900, the bicycle, 3901, or the like, it is possible to detect thelocation of those products with a GPS. As a result, it is possible tolocalize a stolen bicycle. Moreover, it is possible to facilitateresearch of a missing person.

By providing the wireless chip 20 of the present invention on the mobilephone 3902, transmission/reception of data, and phone communicationbecome possible.

Moreover, by providing the wireless chip of the present invention on thegoggle with an earphone 3903, the speaker device 3904, or the headphone3905, music played with an audio device can be listened withoutconnecting the audio device and the electronic device with a code. Acompact hard disc (a memory device) may be included in the goggle withan earphone 3903 besides the wireless chip 20. In the case where thewireless chip 20 includes a central processing unit, since an audiosignal coded by an audio device can be received, demodulated, andamplified by the goggle with an earphone 3903, the headphone 3905, orthe speaker device 3904, sound can be listened with a highconfidentiality. Further, the goggle with an earphone 3903 or theheadphone 3905 can be easily worn since it is codeless, the speaker 3904can be easily set. In this case, it is preferable to provide a batteryon the goggle with an earphone and the speaker device.

By providing the wireless chip 20 of the present invention on thefireworks ball 3906, it is possible to carry out quality management.Specifically, by providing the wireless chip 20 having a sensor devicein the powder filled inside of the fireworks ball or on the surface ofthe fireworks ball, data such as humidity, temperature, or the like ofthe fireworks ball which is detected by the sensor device can betransmitted to a reader/writer. As a result, it is possible to preventsetting off a damp fireworks ball, besides quality management of afireworks ball, and thus, an accident due to a drop of an unexplodedfireworks ball can be prevented.

The wireless chip of the present invention is fixed to products bymounting on a print substrate, attaching to the surface, or embedding.For example, in the case of a package formed with organic resin, thewireless chip is embedded in the organic resin. By providing thewireless chip on products such as foods; plants; clothes; livingwares;and an electronic device, animals and human body, efficiency of systemsuch as a detecting system and a testing system can be promoted.

Next, a description is made on one mode of an electronic device in whichthe wireless chip of the present invention is mounted referring to afigure. The electronic device shown here is a mobile phone, whichincludes cases 2700 and 2706, a panel 2701, a housing 2702, a printwiring substrate 2703, operating buttons 2704, and a battery 2705(reference: FIG. 12). The panel 2701 is incorporated in the housing2702, which is easily peeled off, and the housing 2702 is attached tothe print wiring substrate 2703. The shape and size of the housing 2702is changed appropriately in accordance with the electronic device towhich the panel 2701 is incorporated. A plurality of semiconductordevices, which are packaged, and a wireless chip 2710 of the presentinvention are mounted on the print wiring substrate 2703.

The panel 2701 is connected to the print wiring substrate 2703 through aconnection film 2708. The above panel 2701, the housing 2702, and theprint wiring substrate 2703 are incorporated in the cases 2700 and 2706,besides the operating buttons 2704 and the battery 2705. A pixel region2709 included in the panel 2701 is positioned so as to be recognizedfrom the opening provided in the case 2700.

Note that the cases 2700 and 2706 are description shown as one exampleof an external appearance of a mobile phone, and the electronic deviceswhich are related to the present invention can be changed into variousmode in accordance with its function and its usage.

Herein, a description is made on a block diagram of a high-frequencycircuit represented by a data demodulation and modulation circuit of amobile phone referring to FIG. 14.

First, a description is made on a process of transmitting a signal,which is received by an antenna, into a base band unit. The receivedsignal inputted into an antenna 301 is inputted from a duplexer 302 intoa low noise amplifier (LNA) 303 and amplified to be a prescribed signal.The received signal inputted into the low noise amplifier (LNA) 303passes a band pass filter (BPF) 304 to be inputted into a mixer 305. AnRF signal is inputted from a hybrid circuit 306 into the mixer 305, andthe RF signal component is removed in the band pass filter (BPF) 307 tobe demodulated. The received signal outputted from the mixer 305 isamplified in an amplifier 309 after passing a SAW filter 308, andinputted into a mixer 310. A local oscillation signal of a prescribedfrequency is inputted from a local oscillator circuit 311 to the mixer310, converted into a desirable frequency, and amplified into aprescribed level by an amplifier 312. Then the signal is transmittedinto a base band unit 313. The antenna 301, the duplexer 302, and a lowpass filter 328 are described as an antenna front end module 331.

Next, a description is made on a process of transmitting a signal withan antenna, which is transmitted from a base band unit. The transmittedsignal from the base band unit 313 is mixed with an RF signal from thehybrid circuit 306 by a mixer 321. The hybrid circuit 306 is connected avoltage control transmission circuit (VCO) 322, and thus, an RF signalof a prescribed frequency is supplied.

The transmitted signal, to which an RF modulation is performed by themixer 321, is amplified by a power amplifier (PA) 324, after passing aband pass filter (BPF) 323. A part of the output by the power amplifier(PA) 324 is taken out from a coupler 325, and adjusted into a prescribedlevel by an attenuator (APC) 326. Then, the output is inputted into thepower amplifier (PA) 324 again, and adjusted so as to stabilize the gainof the power amplifier (PA) 324. The transmitted signal from the coupler325 is inputted into the duplexer 302, after passing an isolator 327 forbackflow prevention and a low pass filter (LPF) 328, and transmittedfrom the antenna 301 to which is connected with the duplexer 302. Notethat the attenuator (APC) 326, the power amplifier (PA) 324, the coupler325, and the isolator 327 are described as an isolator power amplifiermodule 332.

The wireless chip of the present invention can reduce its number ofcomponents, since the chip includes a high-frequency circuit representedby the above modulation and demodulation circuit and an antenna. Sincethe number of the components mounted on a wiring substrate can bereduced, it is possible to reduce the area of the wiring substrate. As aresult, a mobile phone can be miniaturized.

Next, a description is made on an example of an inspection device whichcan transmit wirelessly a detected functional data of a biological bodyreferring to FIGS. 13A to 13D. In an inspection device 3950 shown inFIG. 13A, a wireless chip 3951 of the present invention is included in acapsule 3952 of which a protection layer is coated. Between the capsule3952 and the wireless chip 3951 may be filled with a filler 3953.

In an inspection device 3955 shown in FIG. 13B, the wireless chip 3951of the present invention is included in the capsule 3952 of which theprotection layer is coated. In addition, an electrode 3956 of thewireless chip is exposed at the outside of the capsule 3952. Between thecapsule 3952 and the wireless chip 3951 may be filled with the filler3953.

The wireless chips 3951 of the inspection devices 3950 and 3955 includea sensor device as shown in Embodiment Modes 2 or 3. In the sensordevice, physical quantity and the chemical quantity are measured so asto detect a functional data of a biological body. Note that it ispossible to transmit to a reader/writer by converting the detectedresults into a signal. For the physical quantity, in the case ofdetecting pressure, light, acoustic wave, or the like, the inspectiondevice 3950 in which the electrode is not exposed in the outside of thecapsule 3952 can be used. In the case where the chemical material suchas temperature, flow rate, magnetism, acceleration, humidity, a gascomponent like gas, and a liquid component like ion are detected, it ispreferable to use the inspection device 3955 in which the electrode 3956is exposed in the outside of the capsule 3952 as shown in FIG. 13B.

In the case where an inspection device images the inside of human body,a light-emitting device such as an LED (Light Emitting Diode) and an ELmay be provided in the inspection device. As a result, it is possible toimage the inside of human body.

The protection layer provided in the surface of the capsule ispreferably includes diamond like carbon (DLC), silicon nitride, siliconoxide, silicon nitride, silicon oxynitride or carbon nitride. Thecapsule and filler are known one selected appropriately. By providingthe protection layer in the capsule, it is possible to prevent thecapsule or the wireless chip from melting and being denatured inside thebody.

Note that the wireless chip having a battery as shown in Embodiment Mode3 may be used for a sensor device in order to transmit data of thedetected result from an inspection device to a reader/writerautomatically.

Next, a description is made on the method of an inspection device. Theinspection device 3950 or 3955 is swallowed by an examinee 3962, and ismoved inside a body lumen 3963. The detected results by the sensordevice of the wireless chip is transmitted to a reader/writer 3961 whichis set near the examinee. The reader/writer receives the results. As aresult, functional data of the biological body of the examinee can bedetected on the spot without collecting the wireless chip. Further, theimages of body lumen and digestive organs can be taken out.

By embedding the inspection device 3950 or 3955 in the examinee 3962, asshown in FIG. 13D, the results detected by a sensor device of thewireless chip is transmitted to a reader/writer 3964 which is set nearthe examinee. In this case, the inspection device 3955 is embedded inbody so as to touch the electrode 3956 with the portion of theexaminee's body for measuring. The reader/writer receives the results.The received results is stored and processed by a biological datamanagement computer, the biological data of the examinee can be managed.In addition, by providing the reader/writer 3964 in a bed 3960,biological data can be detected at all the times for the examinee havinga difficulty in moving due to a defective function in body. Thus, thedisease state and health condition can be managed.

The present embodiment can be combined with any one of the aboveembodiment modes, appropriately.

Embodiment 2

In the present embodiment, a description is made on a detecting methodby a sensor device and transmission/reception methods of the detecteddata in the wireless chip having a sensor device, referring to FIGS. 8Ato 10.

FIG. 8A describes one example of a sensor device which detectsbrightness of circumstance or light-emission. A sensor device 908 has asensor element 906 and a sensor circuit 909. The sensor element 906 isformed with photodiode, phototransistor, or the like. The sensor circuit909 includes a sensor driving circuit 952, a detecting circuit 153 andan A/D converter circuit 954.

FIG. 8B describes a detecting circuit 953. In the case where a TFT 955for reset is conductive, a reverse bias is applied to the sensor element906. Herein, potential of the sensor element 906 in a negative sideterminal is charged to potential of power supply voltage, and theoperation is called as reset. After that, the TFT 955 for reset is madenon conductive. At this time, potential state changes as time passes dueto electromotive force of the sensor element 906. In other words,potential of the sensor element 906 in a negative side terminal which ischarged to potential of power supply voltage reduces gradually due tocharge generated in photoelectric conversion. After passing a certaintime, if a TFT 957 for bias is made conductive, a signal is outputted tothe output side through a TFT 956 for amplification. In this case, theTFT 956 for amplification and the TFT 957 for bias operates as aso-called a source follower circuit. FIG. 8B describes an example inwhich a source follower circuit is formed with an n-channel TFT;however, it can be formed with a p-channel TFT, obviously. Power supplyvoltage Vdd is added to a power supply line on amplification side 958.Reference potential 0 volt is applied to a power supply line on biasside 959. A drain side terminal of the TFT for amplification isconnected to a power supply line on amplification side, and a sourceside terminal is connected to a drain terminal of the TFT 957 for bias.The source side terminal of the TFT 957 for bias is connected to thepower supply line on bias side 959. Bias voltage Vb is applied to a gateterminal of the TFT 957 for bias, and bias current Ib is flowed to theTFT. The TFT 957 for bias functions as constant current sourcebasically. Input voltage Vin is applied to a gate terminal of the TFT956 for amplification, and a source terminal becomes an output terminal.Input and output relation of the source follower circuit is representedas follows: Vout=Vin−Vb. The output voltage Vout is converted into adigital signal by an A/D conversion circuit 954. The digital signal isoutputted to the arithmetic processing circuit portion 903.

FIG. 9 is a flow chart describing operation of a data management device401 and a wireless chip 900 having a sensor devices 908. The datamanagement device 401 transmits a control signal such as a sensor devicestarting signal, a data reading signal, and a data writing signal. Thecontrol signal is received by the wireless chip 900. The wireless chip900 distinguishes the control signal with an arithmetic processingcircuit. Then, which operation is conducted is determined from the threeoperations: measurement and storage of data by operating the sensorelement 906; reading of data stored in a memory portion; and writingdata in a memory portion. In the operation of measurement and storage ofdata, the sensor circuit 909 is operated, and a signal of the sensorelement 906 is read. Then, the signal is binarized through the sensorcircuit 909, and stored in a memory portion. In the operation of writingdata, the data transmitted from the data management device 401 iswritten in the memory portion 904. In the operation of reading datastored in the memory portion, data of the memory portion 904 is read,and transmitted to the data management device 401. The power requiredfor operating circuit is generated with transmission of a signal or asneeded.

Next, a description is made on a system of transmitting and receivingdata detected by the sensor device 908 of the wireless chip with areader/writer of the data management device 401 referring to FIG. 10.FIG. 10 describes one example of a reader/writer 920 which transmits andreceives the wireless chip 900 of the present invention and data of thewireless chip 900. The reader/writer 920 includes a communicationcircuit portion 922 having an antenna 921, a transmitter 923, ademodulation circuit 924, and a modulation circuit 925. In addition, anarithmetic processing circuit portion 926 and an external interfaceportion 927 are included. In order to transmit and receive a controlsignal through encryption, an encryption/decryption circuit portion 928and a memory portion 929 are included. A power supply circuit portion930 supplies electric power to each circuit, and supplies the electricpower supplied from an external power supply 931 to each circuit.

After data detected by the sensor device 908 of the wireless chip 900 isprocessed with the arithmetic processing circuit portion 903, it isstored in the memory portion 904. A signal 942 that is transmitted as anelectric wave after passing the modulation circuit 925 of thereader/writer 920 is converted into an AC electric signal due toelectromagnetic induction in an antenna 902 of the wireless chip 900. Ina demodulation circuit 912 of the communication circuit portion 905, theAC electric signal is demodulated and transmitted to the arithmeticprocessing circuit portion 903 in subsequent stage. In the arithmeticprocessing circuit portion 903, data detected by a sensor device whichis stored in the memory portion 904 is called up in accordance with theinputted signal. Then, the signal is transmitted from the arithmeticprocessing circuit portion 903 to the modulation circuit 913, andmodulated into an AC electric signal in the modulation circuit 913.After that, the AC electric signal 941 is transmitted to the antenna 921of the reader/writer 920 through the antenna 902.

The AC electric signal 941 received with the antenna 921 of thereader/writer 920 is demodulated with the demodulation circuit 924 ofthe communication circuit portion 922, and transmitted to the arithmeticprocessing circuit portion 926 and the external interface portion 927 insubsequent stage. Then, the data detected by a sensor device isdisplayed in a display connected to the external interface portion 927and the data management device 401 such as a computer.

Embodiment 3

The present embodiment describes a management system of a glass houseand a domesticated plant referring to FIG. 15.

In the management system of a glass house and a domesticated plant shownin FIG. 15, wireless chips 605 to 607 are included in each of the glasshouses 601 to 603. The wireless chips 605 to 607 have a battery and asensor device. In addition, the sensor device which detects temperature,humidity, lighting intensity, or the like is used.

The sensor device of the wireless chip measures data such astemperature, humidity, and lighting intensity of the glass houses 601 to603, and the results are transmitted to a reader/writer 608. Since thewireless chip of the present embodiment has a battery, the transmittingdistance can be set long. Thus, the reader/writer is not necessarilyprovided in each glass house, so that the number of the reader/writerscan be reduced.

The reader/writer 608 is connected to an interface 611. The datareceived by the reader/writer 608 such as temperature, humidity,lighting intensity, or the like of a glass house is transmitted to adata base 612 such as a house of a producer, a management center, or thelike through the interface 611. The data such as temperature, humidity,lighting intensity, or the like is displayed in a terminal 613 providedin the house of the producer, the management center, or the like, andthe data is stored in the data base.

The interface 611 is a means for transmitting and receiving datadetected by sensor devices of the wireless chips 605 to 607 to theoutside over interne, phone line, or the like.

By providing the wireless chip of the present invention in a glasshouse, it is possible to know data such as temperature, humidity,lighting intensity, or the like remotely in real time, and the detailedcultivation data can be recorded.

The present embodiment and any one of the above embodiment modes can becombined appropriately.

This application is based on Japanese Patent Application serial no.2005-103233 filed in Japan Patent Office on 31 Mar. 2005, and the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A semiconductor device comprising: a firstconductive layer; a second conductive layer; a dielectric layer betweenthe first conductive layer and the second conductive layer; a thirdconductive layer in direct contact with an outer side surface of thedielectric layer; a chip comprising a field-effect transistor; and afourth conductive layer electrically connected to the chip, wherein thefourth conductive layer is electrically connected to the secondconductive layer, wherein the first conductive layer is in directcontact with a first surface of the dielectric layer, wherein the secondconductive layer is in direct contact with a second surface of thedielectric layer, wherein the third conductive layer is in directcontact with the first surface and the second surface of the dielectriclayer, and wherein at least one of the first surface and the secondsurface is coplanar with the third conductive layer.
 2. Thesemiconductor device according to claim 1, wherein the fourth conductivelayer comprises a bump, a conductive paste, an anisotropic conductiveadhesive, or an anisotropic conductive film.
 3. The semiconductor deviceaccording to claim 1, wherein the field-effect transistor comprises ann-type single crystalline silicon substrate, a p-type single crystallinesilicon substrate, a GaAs substrate, an InP substrate, a GaN substrate,a SiC substrate, a sapphire substrate, a ZnSe substrate, or an SOIsubstrate.
 4. The semiconductor device according to claim 1, wherein aconnecting portion of the second conductive layer and the chip is filledwith an under fill.
 5. The semiconductor device according to claim 4,wherein the under fill comprises an epoxy resin, an acrylic resin, or apolyimide resin.
 6. The semiconductor device according to claim 1,wherein the semiconductor device comprises a high-frequency circuit. 7.The semiconductor device according to claim 1, wherein the dielectriclayer comprises one or more materials selected from alumina, glass,forsterite, barium titanate, lead titanate, strontium titanate, leadzirconate, lithium niobate, and lead zirconium titanate.
 8. Thesemiconductor device according to claim 1, wherein the dielectric layercomprises one or more materials selected from epoxy resin, phenol resin,polybutadiene resin, bismaleimide triazine resin, vinylbenzyl, and polyfumarate.
 9. The semiconductor device according to claim 1, wherein thesemiconductor device is included in an electronic device.
 10. Theelectronic device according to claim 9, wherein the electronic device isa liquid crystal display device, an EL display device, a televisiondevice, a mobile phone, a printer, a camera, a personal computer, agoggle with earphone, a speaker device, a headphone, a navigationdevice, or an electronic key.
 11. The semiconductor device according toclaim 1, further comprising: a wiring substrate; and a sensor device,wherein the wiring substrate is provided between the second conductivelayer and the fourth conductive layer, and wherein the sensor device ismounted on the wiring substrate.
 12. The semiconductor device accordingto claim 1, further comprising: a wiring substrate; and a battery,wherein the wiring substrate is provided between the second conductivelayer and the fourth conductive layer, and wherein the battery ismounted on the wiring substrate.
 13. The semiconductor device accordingto claim 1, further comprising: a wiring substrate; a battery; and asensor device, wherein the wiring substrate is provided between thesecond conductive layer and the fourth conductive layer, and wherein thebattery and the sensor device are mounted on the wiring substrate.
 14. Asemiconductor device comprising: a first conductive layer configured toserve as a radiating electrode; a second conductive layer configured toserve as a ground contact body; a dielectric layer between the firstconductive layer and the second conductive layer; a third conductivelayer configured to supply power to the first conductive layer; a chipcomprising a field-effect transistor; and a fourth conductive layerelectrically connected to the chip, wherein the fourth conductive layeris electrically connected to the second conductive layer, wherein thethird conductive layer is in direct contact with an outer side surfaceof the dielectric layer, wherein the first conductive layer is in directcontact with a first surface of the dielectric layer, wherein the secondconductive layer is in direct contact with a second surface of thedielectric layer, wherein the third conductive layer is in directcontact with the first surface and the second surface of the dielectriclayer, and wherein at least one of the first surface and the secondsurface is coplanar with the third conductive layer.
 15. Thesemiconductor device according to claim 14, wherein the fourthconductive layer comprises a bump, a conductive paste, an anisotropicconductive adhesive, or an anisotropic conductive film.
 16. Thesemiconductor device according to claim 14, wherein the field-effecttransistor comprises an n-type single crystalline silicon substrate, ap-type single crystalline silicon substrate, a GaAs substrate, an InPsubstrate, a GaN substrate, a SiC substrate, a sapphire substrate, aZnSe substrate, or an SOI substrate.
 17. The semiconductor deviceaccording to claim 14, wherein a connecting portion of the secondconductive layer and the chip is filled with an under fill.
 18. Thesemiconductor device according to claim 17, wherein the under fillcomprises an epoxy resin, an acrylic resin, or a polyimide resin. 19.The semiconductor device according to claim 14, wherein thesemiconductor device comprises a high-frequency circuit.
 20. Thesemiconductor device according to claim 14, wherein the dielectric layercomprises one or more materials selected from alumina, glass,forsterite, barium titanate, lead titanate, strontium titanate, leadzirconate, lithium niobate, and lead zirconium titanate.
 21. Thesemiconductor device according to claim 14, wherein the dielectric layercomprises one or more materials selected from epoxy resin, phenol resin,polybutadiene resin, bismaleimide triazine resin, vinylbenzyl, and polyfumarate.
 22. The semiconductor device according to claim 14, whereinthe semiconductor device is included in an electronic device.
 23. Theelectronic device according to claim 22, wherein the electronic deviceis a liquid crystal display device, an EL display device, a televisiondevice, a mobile phone, a printer, a camera, a personal computer, agoggle with earphone, a speaker device, a headphone, a navigationdevice, or an electronic key.
 24. The semiconductor device according toclaim 14, further comprising: a wiring substrate; and a sensor device,wherein the wiring substrate is provided between the second conductivelayer and the fourth conductive layer, and wherein the sensor device ismounted on the wiring substrate.
 25. The semiconductor device accordingto claim 14, further comprising: a wiring substrate; and a battery,wherein the wiring substrate is provided between the second conductivelayer and the fourth conductive layer, and wherein the battery ismounted on the wiring substrate.
 26. The semiconductor device accordingto claim 14, further comprising: a wiring substrate; a battery; and asensor device, wherein the wiring substrate is provided between thesecond conductive layer and the fourth conductive layer, and wherein thebattery and the sensor device are mounted on the wiring substrate.